Single electron transistors with Nb/AlOx/Nb junctions

被引：17

作者：

Dolata, R ^{[1
]}

Scherer, H ^{[1
]}

Zorin, AB ^{[1
]}

Niemeyer, J ^{[1
]}

机构：

[1] Phys Tech Bundesanstalt, D-38116 Braunschweig, Germany

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2003年 / 21卷 / 02期

关键词：

D O I：

10.1116/1.1560213

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Deep submicron Nb/AlOx/Nb tunnel junctions and single electron transistors were fabricated by electron beam gun shadow evaporation, using stencil masks consisting of the thermostable polymer polyethersulfone and germanium. The I(U) characteristics of the single electron transistors show special features due to the tunneling of single Cooper pairs and quasiparticles. Significant e-periodic gate modulation is observed in both the superconducting and the normal state and a gap energy Delta(eff) of up to approximate to 1 meV has been achieved. The special features of,using the refractory metal Nb in combination with the shadow evaporation technique are discussed. (C) 2003 American Vacuum Society.

引用

页码：775 / 780

页数：6

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