Magnetic and Electronic Properties of Gd-Doped Topological Insulator Bi1.09Gd0.06Sb0.85Te3

被引:16
作者
Filnov, S. O. [1 ]
Surnin, Yu. A. [1 ]
Koroleva, A. V. [1 ]
Klimovskikh, I. I. [1 ]
Estyunin, D. A. [1 ]
Varykhalov, A. Yu. [2 ]
Bokai, K. A. [1 ]
Kokh, K. A. [1 ,3 ,4 ]
Tereshchenko, O. E. [1 ,3 ,5 ]
Golyashov, V. A. [1 ,3 ,5 ]
Shevchenko, E. V. [1 ]
Shikin, A. M. [1 ]
机构
[1] St Petersburg State Univ, St Petersburg 198504, Russia
[2] Helmholtz Zentrum Berlin Mat & Energie, Elektronenspeicherring BESSY II, Albert Einstein Str 15, D-12489 Berlin, Germany
[3] Novosibirsk State Univ, Novosibirsk 630090, Russia
[4] Russian Acad Sci, Sobolev Inst Geol & Mineral, Siberian Branch, Novosibirsk 630090, Russia
[5] Russian Acad Sci, Siberian Branch, Rzhanov Inst Semicond Phys, Novosibirsk 630090, Russia
基金
俄罗斯科学基金会;
关键词
SPIN; BI2TE3; STATES;
D O I
10.1134/S106377611908003X
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The recent realization of quantum anomalous Hall effect and Majorana fermions observation enhance interest in magnetism investigation in topological insulators. In this work, the electronic and magnetic structure of the Gd-doped topological insulator Bi1.09Gd0.06Sb0.85Te3 were systematically studied by means of angle-resolved photoemission spectroscopy, resonance photoemission spectroscopy (ResPES) and SQUID magnetometry. Resonant features related to the Gd density of states near the Fermi level are experimentally observed. Study of magnetic structure showed antiferromagnetic ordered bulk at low temperatures as well as presence of hysteresis loop at elevated temperatures. Finally, possible mechanism of magnetism and its relation to observed electronic features are discussed.
引用
收藏
页码:404 / 412
页数:9
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