Magnetotransport properties of strained Ga0.95Mn0.05As epilayers close to the metal-insulator transition:: Description using Aronov-Altshuler three-dimensional scaling theory

被引：12
作者：
Honolka, J.
Masmanidis, S.
Tang, H. X.
Awschalom, D. D.
Roukes, M. L.
机构：
[1] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany
[2] CALTECH, Pasadena, CA 91125 USA
[3] Univ Calif Santa Barbara, Dept Phys, Santa Barbara, CA 93106 USA
来源：
PHYSICAL REVIEW B | 2007年 / 75卷 / 24期
关键词：
D O I：
10.1103/PhysRevB.75.245310
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The magnitude of the anisotropic magnetoresistance (AMR) and the longitudinal resistance in compressively strained Ga0.95Mn0.05As epilayers were measured down to temperatures as low as 30 mK. Below temperatures of 3 K, the conductivity decreases proportional to T-1/3 over 2 orders of magnitude in temperature. The conductivity can be well described within the framework of a three-dimensional scaling theory of Anderson's transition in the presence of spin scattering in semiconductors. It is shown that the samples are on the metallic side but very close to the metal-insulator transition. At lowest temperatures, a decrease in the AMR effect is observed, which is assigned to changes in the coupling between the remaining itinerant carriers and the local Mn 5/2-spin moments.
引用
收藏
页数：6
相关论文
共 27 条
[1]  
ALTSHULER BL, 1983, JETP LETT+, V37, P410
[2]   Effects of disorder on ferromagnetism in diluted magnetic semiconductors [J].
Berciu, M ;
Bhatt, RN .
PHYSICAL REVIEW LETTERS, 2001, 87 (10) :1-107203
[3]   Magnetic circular dichroism studies of carrier-induced ferromagnetism in (Ga1-xMnx)As [J].
Beschoten, B ;
Crowell, PA ;
Malajovich, I ;
Awschalom, DD ;
Matsukura, F ;
Shen, A ;
Ohno, H .
PHYSICAL REVIEW LETTERS, 1999, 83 (15) :3073-3076
[4]   LOW-TEMPERATURE CONDUCTIVITY AND WEAK-LOCALIZATION EFFECT IN BARELY METALLIC GAAS [J].
CAPOEN, B ;
BISKUPSKI, G ;
BRIGGS, A .
JOURNAL OF PHYSICS-CONDENSED MATTER, 1993, 5 (16) :2545-2552
[5]   Temperature-dependent magnetization in diluted magnetic semiconductors [J].
Das Sarma, S ;
Hwang, EH ;
Kaminski, A .
PHYSICAL REVIEW B, 2003, 67 (15)
[6]   Hole-mediated ferromagnetism in tetrahedrally coordinated semiconductors [J].
Dietl, T ;
Ohno, H ;
Matsukura, F .
PHYSICAL REVIEW B, 2001, 63 (19)
[7]   Effect of low-temperature annealing on transport and magnetism of diluted magnetic semiconductor (Ga, Mn)As [J].
Hayashi, T ;
Hashimoto, Y ;
Katsumoto, S ;
Iye, Y .
APPLIED PHYSICS LETTERS, 2001, 78 (12) :1691-1693
[8]   Resistivity minima and Kondo effect in ferromagnetic GaMnAs films [J].
He, HT ;
Yang, CL ;
Ge, WK ;
Wang, JN ;
Dai, X ;
Wang, YQ .
APPLIED PHYSICS LETTERS, 2005, 87 (16) :1-3
[9]   Dc-transport properties of ferromagnetic (Ga,Mn)As semiconductors [J].
Jungwirth, T ;
Sinova, J ;
Wang, KY ;
Edmonds, KW ;
Campion, RP ;
Gallagher, BL ;
Foxon, CT ;
Niu, Q ;
MacDonald, AH .
APPLIED PHYSICS LETTERS, 2003, 83 (02) :320-322
[10]   Polaron percolation in diluted magnetic semiconductors [J].
Kaminski, A ;
Das Sarma, S .
PHYSICAL REVIEW LETTERS, 2002, 88 (24) :4
123