Anisotropy of the elastic properties of wurtzite InN epitaxial films

被引：0
作者：
Harutyunyan, VS [1 ]
Specht, P
Ho, J
Weber, ER
机构：
[1] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA
[2] Lawrence Berkeley Lab, Dept Mat Sci, Berkeley, CA USA
来源：
DEFECTS AND DIFFUSION IN CERAMICS - AN ANNUAL RETROSPECTIVE VI | 2004年 / 226-228卷
关键词：
elastic anisotropy; point defects; strain; wurtzite nitrides; X-ray diffraction;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The anisotropy of elastic bulk constants of wurtzite InN is analyzed theoretically on the basis of available data for elastic constants. A considerable anisotropy is evaluated both for Young's modulus and Poisson ratio of highly textured InN epitaxial films deposited on the basal plane. A comparative analysis of elastic properties is conducted for wurtzite InN, GaN and AIN. An approach is suggested for estimating vacancy concentrations on the basis of SIMS and x-ray diffraction measurements.
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页码：79 / 89
页数：11
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