Phase transformation on CdSe thin films under annealing in Ar+Se2 atmosphere

被引:28
作者
Portillo-Moreno, O
Lozada-Morales, R
Rubín-Falfán, M
Pérez-Alvarez, JA
Zelaya-Angel, O
Baños-López, L
机构
[1] IPN, Ctr Invest & Estudios Avanzados, Dept Fis, Mexico City 07360, DF, Mexico
[2] Univ Autonoma Puebla, FCFM Benemerita, Posgrado Optoelect, Puebla 72570, Mexico
[3] Univ Nacl Autonoma Mexico, Inst Invest Mat, Mexico City, DF, Mexico
关键词
thin films; semiconductors; chemical synthesis; phase transitions;
D O I
10.1016/S0022-3697(00)00051-2
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Cubic CdSe thin films of approximately 2000 Angstrom thickness have been prepared onto glass substrates by chemical bath deposition. The samples were annealed in an Ar + Se-2 atmosphere at normal pressure for 30 h at different temperatures in the range of 50-500 degrees C, in order to per-form the crystalline phase transformation from cubic zincblende (ZB) to the hexagonal wurtzite (W) structure. The characterization of samples included both optical absorption and X-ray diffraction analyses, The optical absorption spectra allowed to calculate the energy band-gap (E-g) values and, hence, the evolution of E-g in the thermally treated samples through the transformation from the cubic crystalline phase to the hexagonal phase. The X-ray diffraction spectra also showed the complete microstructural transformation from as-grown cubic samples up to the entire hexagonal lattice for samples with higher annealing, The critical point of the ZB --> W transformation is proposed to occur at 355 +/- 25 degrees C. (C) 2000 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:1751 / 1754
页数:4
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