Evaluation and Modeling of Voltage Stress-Induced Hot Carrier Effects in High-Speed SiGe HBTs

被引：0

作者：

Sasso, Grazia ^{[1
]}

Maneux, Cristell ^{[2
]}

Boeck, Josef ^{[3
]}

d'Alessandro, Vincenzo ^{[1
]}

Aufinger, Klaus ^{[3
]}

Zimmer, Thomas ^{[2
]}

Rinaldi, Niccolo ^{[1
]}

机构：

[1] Univ Naples Federico II, Dept Elect Engn & Informat Technol, Via Claudio 21, I-80125 Naples, Italy

[2] Univ Bordeaux, IMS, Bordeaux, France

[3] Infineon Technol AG, Neubiberg, Germany

来源：

2014 IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM (CSICS): INTEGRATED CIRCUITS IN GAAS, INP, SIGE, GAN AND OTHER COMPOUND SEMICONDUCTORS | 2014年

关键词：

Degradation models; hot carrier effects; reliability; reverse EB stress; RF devices; SiGe HBT;

D O I：

暂无

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

Hot-carrier degradation analysis and modeling of 240/380 GHz fT/fMAX SiGe HBTs are addressed. A proper stress bias setup is proposed, suitable for the evaluation of RF performance during stress interruption. The impact of stress conditions, lateral scaling and device layout is discussed. An analytical model is proposed, which predicts base current degradation, including its dependence upon stress voltage, stress duration, and emitter geometry, and contributes to understand the physical background of the phenomena.

引用

页数：4

共 50 条

[31] Modeling avalanche multiplication for advanced high-speed SiGe bipolar transistors
Pfost, M
Kubrak, V
Romanyuk, A
2003 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, DIGEST OF PAPERS, 2003, : 18 - 21
[32] Electrostatic Discharge Stress effects on the Performance and Reliability of High Performance NPN SiGe HBTs
Ioannou, Dimitris P.
Gebreselasie, Ephrem
Pham, Vinh
Raghunathan, Uppili S.
2023 IEEE BICMOS AND COMPOUND SEMICONDUCTOR INTEGRATED CIRCUITS AND TECHNOLOGY SYMPOSIUM, BCICTS, 2023, : 245 - 248
[33] New Insights Into Noise Characteristics of Hot Carrier Induced Defects in Polysilicon Emitter Bipolar Junction Transistors and SiGe HBTs
Zhu, Kunfeng
Zhang, Peijian
Xu, Zicheng
Wang, Tao
Yi, Xiaohui
Hong, Min
Yang, Yonghui
Zhang, Guangsheng
Liu, Jian
Wei, Jianan
Pu, Yang
Huang, Dong
Luo, Ting
Chen, Xian
Tang, Xinyue
Tan, Kaizhou
Chen, Wensuo
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2023, 11 : 30 - 35
[34] Physics of Hot Carrier Degradation Under Off-State Mode Operation in High Performance NPN SiGe HBTs
Ioannou, Dimitris P.
Raghunathan, Uppili S.
Brochu, Dave
Divergilio, Adam
Jain, Vibhor
Pekarik, John J.
2021 IEEE BICMOS AND COMPOUND SEMICONDUCTOR INTEGRATED CIRCUITS AND TECHNOLOGY SYMPOSIUM (BCICTS), 2021,
[35] Characterization and TCAD Modeling of Mixed-Mode Stress Induced by Impact Ionization in Scaled SiGe HBTs
Zagni, Nicolo
Puglisi, Francesco Maria
Verzellesi, Giovanni
Pavan, Paolo
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 67 (11) : 4597 - 4601
[36] Modeling of single-event effects in circuit-hardened high-speed SiGe HBT logic
Niu, GF
Krithivasan, R
Cressler, JD
Marshall, P
Marshall, C
Reed, R
Harame, DL
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2001, 48 (06) : 1849 - 1854
[37] Low Frequency Noise in High Speed SiGe:C HBTs after Forward and Mixed-Mode Stress
Diop, Malick
Leyris, Cedric
Revil, Nathalie
Marin, Mathieu
Ghibaudo, Gerard
NOISE AND FLUCTUATIONS, 2009, 1129 : 629 - +
[38] The Worst Stress Condition of Hot Carrier Degradation on High Voltage LDMOSFET
Huayang, Sarah Zhou
Song, Yongliang
Song, Zhuo
Yanju, Lisa Yu
Yong, Atman Zhao
Wu, Jeff
Chang, Venson
Chien, Kary
PROCEEDINGS OF THE 2013 20TH IEEE INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA 2013), 2013, : 694 - 696
[39] Fiber Structure Development of PHBH through Stress-Induced Crystallization in High-Speed Melt Spinning Process
Qin, Qing
Takarada, Wataru
Kikutani, Takeshi
JOURNAL OF FIBER SCIENCE AND TECHNOLOGY, 2017, 73 (02): : 49 - 60
[40] Modeling and Coupling Effects Analysis of a High-speed Aircraft
Feng, Dongzhu
Wang, Xin
2008 IEEE/ASME INTERNATIONAL CONFERENCE ON ADVANCED INTELLIGENT MECHATRONICS, VOLS 1-3, 2008, : 1137 - +

← 1 2 3 4 5 →