Optical and x-ray characterization of two novel CMOS image sensors

被引：1

作者：

Bohndiek, Sarah E. ^{[1
]}

Arvanitis, Costas D. ^{[1
]}

Venanzi, Cristian ^{[1
]}

Royle, Gary J. ^{[1
]}

Clark, Andy T. ^{[2
]}

Crooks, Jamie P. ^{[2
]}

Prydderch, Mark L. ^{[2
]}

Turchetta, Renato ^{[2
]}

Blue, Andrew ^{[3
]}

Speller, Robert D. ^{[1
]}

机构：

[1] UCL, Dept Med Phys & Bioengn, Mortimer St, London, England

[2] CCLRC, Rutherford Appleton Lab, Engn & Instrumentat Dept, Oxford, England

[3] Univ Glasgow, Phys & Astron Dept, Glasgow, Lanark, Scotland

来源：

ULTRAFAST PHENOMENA IN SEMICONDUCTORS AND NANOSTRUCTURE MATERIALS XI AND SEMICONDUCTOR PHOTODETECTORS IV | 2007年 / 6471卷

关键词：

complementary metal oxide semiconductor (CMOS); active pixel sensor; digital pixel sensor; photon transfer curve; modulation transfer function;

D O I：

10.1117/12.700581

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A UK consortium (MI3) has been founded to develop advanced CMOS pixel designs for scientific applications. Vanilla, a 520x520 array of 25 mu m pixels benefits from flushed reset circuitry for low noise and random pixel access for re-don of interest (ROI) readout. OPIC, a 64x72 test structure array of 30 mu m digital pixels has thresholding capabilities for sparse readout at 3,700fps. Characterization is performed with both optical illumination and x-ray exposure via a scintillator. Vanilla exhibits 34 +/- 3e(-) read noise, interactive quantum efficiency of 54% at 500nm and can read a 6x6 ROI at 24,395fps. OPIC has 46 +/- 3e(-) read noise and a wide dynamic range of 65dB due to high full well capacity. Based on these characterization studies, Vanilla could be utilized in applications where demands include high spectral response and high speed region of interest readout while OPIC could be used for high speed, high dynamic range imaging.

引用

页数：12

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