Geometry and core-level shifts of Li/GaAs(110) surface

被引:0
作者
Yi, H [1 ]
Lee, S
Kim, H
机构
[1] Korea Inst Sci & Technol Informat, Supercomp Ctr, Taejon 305600, South Korea
[2] Korea Res Inst Stand & Sci, Mat Evaluat Ctr, Taejon 305600, South Korea
关键词
Li; /GaAs(110); surface; core-level shift; atomic structure;
D O I
暂无
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We have performed total-energy density-functional calculations using ab initio pseudopotentials to determine the atomic structure of Li adsorbed on a GaAs(110) surface. From the calculated adsorption energies for different adsorption configurations of Li at 0.5 monolayer coverage, we have identified the most stable geometry showing 1 x 2 periodicity. This structure is found to be stabilized by charge transfer from the adatoms to the surface Ga dangling bonds. Based on this structure, we have calculated the core-level shifts of Ga 3d and As 3d. The calculated core-level shifts are in qualitative agreement with recent photoemission spectroscopy experiments, and provide a theoretical basis for the interpretation of the multiple components of core-level shifts.
引用
收藏
页码:S495 / S498
页数:4
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