Indium reevaporation during molecular beam epitaxial growth of InGaAs layers on GaAs substrates

We have studied the In reevaporation behavior during InGaAs growth by molecular beam epitaxy (MBE) on GaAs substrates along with lattice-matched InGaAs on InP substrates for comparison. A proposed rate-equation model for surface processes has proved that the in surface segregation effects due to the In-Ga replacement on the activation energy of In desorption are negligible, The growth temperature was changed from 540 degrees C to 680 degrees C, The growth rates R-InGaAs for InGaAs and R-GaAs for GaAs were determined by measuring the intensity oscillation of reflection high-energy electron diffraction (RHEED) beam. The activation energy of In reevaporation decreases with the strain in InGaAs/GaAs. The In incorporation fraction decreases with the strain in InGaAs, The In incorporation fractions of unstrained InGaAs/InP systems are larger than those of strained InGaAs/GaAs systems. The compressive stress in InGaAs shows stronger influence on decreasing In incorporation as compared to tensile stress.