Study on the electroluminescence properties of diodes based on n-ZnO/p-NiO/p-Si heterojunction

被引：9

作者：

Zhao, Yang ^{[1
]}

Wang, Hui ^{[2
]}

Wu, Chao ^{[1
]}

Li, Wancheng ^{[1
]}

Gao, Fubin ^{[1
]}

Wu, Guoguang ^{[1
]}

Zhang, Baolin ^{[1
]}

Du, Guotong ^{[1
,3
]}

机构：

[1] Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130012, Peoples R China

[2] Henan Univ Sci & Technol, Sch Phys & Engn, Luoyang 471003, Peoples R China

[3] Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116023, Peoples R China

来源：

OPTICS COMMUNICATIONS | 2015年 / 336卷

基金：

中国国家自然科学基金;

关键词：

ZnO; NiO; MOCVD; Electroluminescence; LIGHT-EMITTING-DIODES; NICKEL-OXIDE; FABRICATION; FILMS; PHOTOLUMINESCENCE; TEMPERATURE;

D O I：

10.1016/j.optcom.2014.09.021

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We fabricated the light-emitting diodes (LEDs) consisting of n-ZnO/p-NiO/p-Si heterostructure by using metal-organic chemical vapor deposition (MOCVD) combined with radio frequency (RF) magnetron sputtering. The devices exhibited diode-like rectifying current-voltage characteristics and had a turn-on voltage of 6.8 V. Under forward bias, a prominent broad emission peaked around 400-650 nm was observed at room temperature. The asymmetric electroluminescence (EL) spectra were consisted of two apparent bands, which located at 420 and 495 nm corresponding to the violet and green luminescence, respectively. Furthermore, the mechanism of the light emission was tentatively discussed in terms of the band diagrams of the heterojunction. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：1 / 4

页数：4

共 27 条

[11] The future of ZnO light emitters [J].

Look, DC ;

Claflin, B ;

Alivov, YI ;

Park, SJ .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2004, 201 (10) :2203-2212

[12] Growth and properties of transparent p-NiO/n-ITO (In2O3:Sn) p-n junction thin film diode [J].

Mistry, B. V. ;

Bhatt, P. ;

Bhavsar, K. H. ;

Trivedi, S. J. ;

Trivedi, U. N. ;

Joshi, U. S. .

THIN SOLID FILMS, 2011, 519 (11) :3840-3843

[13] Amplified spontaneous emission from ZnO in n-ZnO/ZnO nanodots-SiO2 composite/p-AlGaN heterojunction light-emitting diodes [J].

Shih, Ying Tsang ;

Wu, Mong Kai ;

Li, Wei Chih ;

Kuan, Hon ;

Yang, Jer Ren ;

Shiojiri, Makoto ;

Chen, Miin Jang .

NANOTECHNOLOGY, 2009, 20 (16)

[14] Ultraviolet and visible electroluminescence from n-ZnO/SiOx/(n,p)-Si heterostructured light-emitting diodes [J].

Tan, S. T. ;

Sun, X. W. ;

Zhao, J. L. ;

Iwan, S. ;

Cen, Z. H. ;

Chen, T. P. ;

Ye, J. D. ;

Lo, G. Q. ;

Kwong, D. L. ;

Teo, K. L. .

APPLIED PHYSICS LETTERS, 2008, 93 (01)

[15] Stable p-Type Doping of ZnO Film in Aqueous Solution at Low Temperatures [J].

Tay, Chuan Beng ;

Chua, Soo Jin ;

Loh, Kian Ping .

JOURNAL OF PHYSICAL CHEMISTRY C, 2010, 114 (21) :9981-9987

[16] Optically transparent of n-ZnO/p-NiO heterojunction for ultraviolet photodetector application [J].

Tsai, Shu-Yi ;

Hon, Min-Hsiung ;

Lu, Yang-Ming .

FUNCTIONAL AND ELECTRONIC MATERIALS, 2011, 687 :711-+

[17] Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO [J].

Tsukazaki, A ;

Ohtomo, A ;

Onuma, T ;

Ohtani, M ;

Makino, T ;

Sumiya, M ;

Ohtani, K ;

Chichibu, SF ;

Fuke, S ;

Segawa, Y ;

Ohno, H ;

Koinuma, H ;

Kawasaki, M .

NATURE MATERIALS, 2005, 4 (01) :42-46

[18]

Vanheusden K, 1996, APPL PHYS LETT, V68, P403, DOI 10.1063/1.116699

[19] Mechanisms behind green photoluminescence in ZnO phosphor powders [J].

Vanheusden, K ;

Warren, WL ;

Seager, CH ;

Tallant, DR ;

Voigt, JA ;

Gnade, BE .

JOURNAL OF APPLIED PHYSICS, 1996, 79 (10) :7983-7990

[20] Carrier recombination in clusters of NiO [J].

Volkov, VV ;

Wang, ZL ;

Zou, BS .

CHEMICAL PHYSICS LETTERS, 2001, 337 (1-3) :117-124

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