Dislocation-induced electronic states and point-defect atmospheres evidenced by electron energy loss imaging -: art. no. 184

Electronic band gap states connected with individual dislocations in diamond and GaN are revealed, using highly spatially resolved electron energy loss (EEL) spectrum mapping. Comparison with calculations of low EEL spectra from first-principle methods allows the identification of the joint density of states of different dislocation core types. Also presented is evidence for instances where point defects/impurities have accumulated in the strain field or segregated to the core of dislocations.