Diamond-based RF power transistors: Fundamentals and applications

被引:100
作者
Kasu, M. [1 ]
Ueda, K. [1 ]
Yamauchi, Y. [1 ]
Tallaire, A. [1 ]
Makimoto, T. [1 ]
机构
[1] NTT Corp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan
关键词
diamond; transistor; RF characteristics; hydrogen passivation;
D O I
10.1016/j.diamond.2006.12.046
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The present status of diamond-based transistors for high-frequency and high-power applications is reviewed. We have achieved the drain current density of 550 mA/mm, cut-off frequencies for current gain (f(T)) and power gain (f(MAX)) of 45 GHz and 120 GHz, respectively, and output-power density of 2.1 W/mm at 1 GHz in class-A operation of a field-effect transistor (FET) with hydrogen (H)-surface-terminated diamond. We have found that gate capacitance can be separated into depletion-layer capacitance and insulator capacitance. Concerning a stability of H-surface termination, no apparent decrease in the current for an FET without a gate contact was observed, but gate bias stress results in a slight decrease in the drain current and simultaneously an increase in the gate leakage current. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码:1010 / 1015
页数:6
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