Pressure dependence of magnetization in diluted magnetic semiconductors

被引：1
作者：
Bednarski, H
Cisowski, J
Portal, JC
机构：
[1] Polish Acad Sci, Ctr Polymer Chem, PL-41819 Zabrze, Poland
[2] Cracow Univ Technol, Inst Phys, PL-30084 Krakow, Poland
[3] Grenoble High Magnet Field Lab, F-38042 Grenoble, France
来源：
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2003年 / 261卷 / 1-2期
关键词：
diluted magnetic semiconductors; d-d interaction exchange; magnetization;
D O I：
10.1016/S0304-8853(02)01470-1
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have introduced a scaling procedure. of the pressure dependence of magnetization in diluted magnetic semiconductors (DMS) based on quite general considerations. This provides the direct relation between the magnetization at certain value of magnetic field, temperature and pressure with that at zero pressure but for lower magnetic field and temperature. It is also shown that this scaling procedure should be applicable to various DMS at zero pressure, as illustrated by appropriate experimental data for Cd1-xMnxTe and Zn1-xMnxTe. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：172 / 177
页数：6
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