Spontaneous direct bonding of thick silicon nitride

被引：22

作者：

Sanchez, S

Gui, C

Elwenspoek, M

机构：

[1] MESA Research Institute, University of Twente, PO Box 217

来源：

JOURNAL OF MICROMECHANICS AND MICROENGINEERING | 1997年 / 7卷 / 03期

关键词：

D O I：

10.1088/0960-1317/7/3/007

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Wafers with 1 mu m LPCVD silicon-rich nitride layers have been successfully direct bonded to silicon-rich nitride and boron-doped silicon surfaces. A chemical-mechanical polishing treatment was necessary to reduce the surface roughness of the nitride before bonding. The measured surface energies of the room-temperature bond were comparable to values found for Si-Si hydrophilic bonding. A mechanism similar to this bonding is suggested for silicon nitride bonding.

引用

页码：111 / 113

页数：3

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