AA-stacked bilayer graphene in an applied electric field: Tunable antiferromagnetism and coexisting exciton order parameter

被引：34

作者：

Akzyanov, R. S. ^{[1
,2
,3
]}

Sboychakov, A. O. ^{[2
,4
]}

Rozhkov, A. V. ^{[1
,2
,4
]}

Rakhmanov, A. L. ^{[1
,2
,3
,4
]}

Nori, Franco ^{[4
,5
]}

机构：

[1] Moscow Phys Tech Inst, Dolgoprudnyi 141700, Russia

[2] Russian Acad Sci, Inst Theoret & Appl Electrodynam, Moscow 125412, Russia

[3] All Russia Res Inst Automat, Moscow 127055, Russia

[4] RIKEN, CEMS, Wako, Saitama 3510198, Japan

[5] Univ Michigan, Dept Phys, Ann Arbor, MI 48109 USA

来源：

PHYSICAL REVIEW B | 2014年 / 90卷 / 15期

基金：

俄罗斯基础研究基金会;

关键词：

BROKEN-SYMMETRY; CONDENSATION;

D O I：

10.1103/PhysRevB.90.155415

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We study the electronic properties of AA-stacked bilayer graphene in a transverse electric field. The strong on-site Coulomb repulsion stabilizes the antiferromagnetic order in such a system. The antiferromagnetic order is suppressed by the transverse bias voltage, at least partially. The interplane Coulomb repulsion and nonzero voltage stabilize an exciton order parameter. The exciton order parameter coexists with the antiferromagnetism and can be as large as several tens of meV for realistic values of the bias voltage and interaction constants. The application of a transverse bias voltage can be used to control the transport properties of the bilayer.

引用

页数：8

共 52 条

[1] Interlayer excitonic superfluidity in graphene [J].

Abergel, D. S. L. ;

Rodriguez-Vega, M. ;

Rossi, Enrico ;

Das Sarma, S. .

PHYSICAL REVIEW B, 2013, 88 (23)

[2] Properties of graphene: a theoretical perspective [J].

Abergel, D. S. L. ;

Apalkov, V. ;

Berashevich, J. ;

Ziegler, K. ;

Chakraborty, Tapash .

ADVANCES IN PHYSICS, 2010, 59 (04) :261-482

[3]

[Anonymous], 2012, TECH PHYS, V57, P1603

[4]

[Anonymous], 2012, PHYSICA E, V44, P1894

[5] Bilayer PseudoSpin Field-Effect Transistor (BiSFET): A Proposed New Logic Device [J].

Banerjee, Sanjay K. ;

Tutuc, Emanuel ;

Reddy, Dharmendar ;

MacDonald, Allan H. .

IEEE ELECTRON DEVICE LETTERS, 2009, 30 (02) :158-160

[6] Stacking sequence dependence of graphene layers on SiC (000(1)over-bar)-Experimental and theoretical investigation [J].

Borysiuk, J. ;

Soltys, J. ;

Piechota, J. .

JOURNAL OF APPLIED PHYSICS, 2011, 109 (09)

[7] Low-density ferromagnetism in biased bilayer graphene [J].

Castro, Eduardo V. ;

Peres, N. M. R. ;

Stauber, T. ;

Silva, N. A. P. .

PHYSICAL REVIEW LETTERS, 2008, 100 (18)

[8] Biased bilayer graphene: Semiconductor with a gap tunable by the electric field effect [J].

Castro, Eduardo V. ;

Novoselov, K. S. ;

Morozov, S. V. ;

Peres, N. M. R. ;

Dos Santos, J. M. B. Lopes ;

Nilsson, Johan ;

Guinea, F. ;

Geim, A. K. ;

Castro Neto, A. H. .

PHYSICAL REVIEW LETTERS, 2007, 99 (21)

[9] The electronic properties of graphene [J].

Castro Neto, A. H. ;

Guinea, F. ;

Peres, N. M. R. ;

Novoselov, K. S. ;

Geim, A. K. .

REVIEWS OF MODERN PHYSICS, 2009, 81 (01) :109-162

[10] 1ST-PRINCIPLES STUDY OF THE ELECTRONIC-PROPERTIES OF SIMPLE HEXAGONAL GRAPHITE [J].

CHARLIER, JC ;

MICHENAUD, JP ;

GONZE, X .

PHYSICAL REVIEW B, 1992, 46 (08) :4531-4539

← 1 2 3 4 5 6 →