Foundation of rf CMOS and SiGeBiCMOS technologies

被引：59

作者：

Dunn, JS

Ahlgren, DC

Coolbaugh, DD

Feilchenfeld, NB

Freeman, G

Greenberg, DR

Groves, RA

Guarin, FJ

Hammad, Y

Joseph, AJ

Lanzerotti, LD

St Onge, SA

Omer, BA

Rieh, JS

Stein, KJ

Voldman, SH

Wang, PC

Zierak, MJ

Subbanna, S

Harame, DL

Herman, DA

Meyerson, BS

机构：

[1] IBM Corp, Microelect Div, Burlington Facil, Essex Jct, VT 05452 USA

[2] IBM Corp, E Fishkill Facil, Microelect Div, Hopewell Jct, NY 12533 USA

[3] IBM Corp, Syst Grp, Poughkeepsie, NY 12601 USA

[4] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

IBM JOURNAL OF RESEARCH AND DEVELOPMENT | 2003年 / 47卷 / 2-3期

关键词：

D O I：

10.1147/rd.472.0101

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

This paper provides a detailed description of the IBM SiGe BiCMOS and rf CMOS technologies. The technologies provide high-performance SiGe heterojunction bipolar transistors (HBTs) combined with advanced CMOS technology and a variety of passive devices critical for realizing an integrated mixed-signal system-on-a-chip (SoC). The paper reviews the process development and integration methodology, presents the device characteristics, and shows how the development and device selection were geared toward usage in mixed-signal IC development.

引用

页码：101 / 138

页数：38

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