Foundation of rf CMOS and SiGeBiCMOS technologies

被引：59

作者：

Dunn, JS

Ahlgren, DC

Coolbaugh, DD

Feilchenfeld, NB

Freeman, G

Greenberg, DR

Groves, RA

Guarin, FJ

Hammad, Y

Joseph, AJ

Lanzerotti, LD

St Onge, SA

Omer, BA

Rieh, JS

Stein, KJ

Voldman, SH

Wang, PC

Zierak, MJ

Subbanna, S

Harame, DL

Herman, DA

Meyerson, BS

机构：

[1] IBM Corp, Microelect Div, Burlington Facil, Essex Jct, VT 05452 USA

[2] IBM Corp, E Fishkill Facil, Microelect Div, Hopewell Jct, NY 12533 USA

[3] IBM Corp, Syst Grp, Poughkeepsie, NY 12601 USA

[4] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

IBM JOURNAL OF RESEARCH AND DEVELOPMENT | 2003年 / 47卷 / 2-3期

关键词：

D O I：

10.1147/rd.472.0101

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

This paper provides a detailed description of the IBM SiGe BiCMOS and rf CMOS technologies. The technologies provide high-performance SiGe heterojunction bipolar transistors (HBTs) combined with advanced CMOS technology and a variety of passive devices critical for realizing an integrated mixed-signal system-on-a-chip (SoC). The paper reviews the process development and integration methodology, presents the device characteristics, and shows how the development and device selection were geared toward usage in mixed-signal IC development.

引用

页码：101 / 138

页数：38

共 87 条

[1] A SiGe HBT BiCMOS technology for mixed signal RF applications [J].

Ahlgren, DC ;

Freeman, G ;

Subbanna, S ;

Groves, R ;

Greenberg, D ;

Malinowski, J ;

Nguyen-Ngoc, D ;

Jeng, SJ ;

Stein, K ;

Schonenberg, K ;

Kiesling, D ;

Martin, B ;

Wu, S ;

Harame, DL ;

Meyerson, B .

PROCEEDINGS OF THE 1997 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING, 1997, :195-197

[2] Manufacturability demonstration of an integrated SiGe HBT technology for the analog and wireless marketplace [J].

Ahlgren, DC ;

Gilbert, M ;

Greenberg, D ;

Jeng, SJ ;

Malinowski, J ;

NguyenNgoc, D ;

Schonenberg, K ;

Stein, K ;

Groves, R ;

Walter, K ;

Hueckel, G ;

Colavito, D ;

Freeman, G ;

Sunderland, D ;

Harame, DL ;

Meyerson, B .

IEDM - INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 1996, 1996, :859-862

[3]

AHLGREN DC, 1998, P 28 ESSDERC, P452

[4]

AHLGREN DC, 1983, P S DEF SIL, P472

[5]

ALDERSTEIN MG, 1991, IEEE T ELECTRON DEV, V38, P1533

[6]

[Anonymous], 2000, DESIGN SIMULATION AP

[7] A high reliability metal insulator metal capacitor for 0.18 μm copper technology [J].

Armacost, M ;

Augustin, A ;

Felsner, P ;

Feng, Y ;

Friese, G ;

Heidenreich, J ;

Hueckel, G ;

Prigge, O ;

Stein, K .

INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST, 2000, :157-160

[8]

BRENNER T, 1999, IBM MICRONEWS, V5, P1

[9]

Burghartz J. N., 1996, IEEE IEDM, P96

[10] Integrated RF components in a SiGe bipolar technology [J].

Burghartz, JN ;

Soyuer, M ;

Jenkins, KA ;

Kies, M ;

Dolan, M ;

Stein, KJ ;

Malinowski, J ;

Harame, DL .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1997, 32 (09) :1440-1445

← 1 2 3 4 5 6 7 8 9 →