Molecular Beam Epitaxially Grown HgTe and HgCdTe-on-Silicon for Space-Based X-Ray Calorimetry Applications

被引：5

作者：

Dreiske, P. ^{[1
]}

Carmody, M. ^{[1
]}

Grein, C. H. ^{[1
]}

Zhao, J. ^{[1
]}

Bommena, R. ^{[1
]}

Kilbourne, C. A. ^{[2
]}

Kelley, R. ^{[2
]}

McCammon, D. ^{[3
]}

Brandl, D. ^{[3
]}

机构：

[1] EPIR Technol, Bolingbrook, IL 60440 USA

[2] NASA, Goddard Space Flight Ctr, Greenbelt, MD 20771 USA

[3] Univ Wisconsin, Dept Phys, Madison, WI 53706 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2010年 / 39卷 / 07期

关键词：

MBE; HgCdTe; HgTe; x-ray; calorimetry; calorimeters; MCT on Si; zero-gap HgCdTe; CdTe; CdZnTe; THERMAL DETECTORS; HEAT;

D O I：

10.1007/s11664-010-1249-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Arrays of x-ray microcalorimeters will enable broadband, high-resolution x-ray spectroscopy to study and substantiate black holes, dark matter, and other celestial phenomenon. At EPIR we continue to achieve growth of high-quality, low-doped, single-crystal HgCdTe, and HgTe epilayers on Si and CdZnTe to be employed by NASA in these instruments. Excellent low-temperature heat capacities (with no significant electronic term) have been demonstrated in integrated devices, with both HgTe and HgCdTe showing improvement over the HgTe used previously. Goal resolutions <= 4 eV have been achieved with good yield for both HgTe and HgCdTe.

引用

页码：1087 / 1096

页数：10

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