Phase structure and residual stress in annealed Cu-W films

被引：0

作者：

Wang Yuan ^{[1
]}

Li Xiaohua

Song Zhongxiao

Xu Kewei

Wei Xiuying

机构：

[1] Gen Res Inst NonFerrous Met, Res Ctr Energy Mat & Technol, Beijing 100088, Peoples R China

[2] Beijing Univ Technol, Signal & Informat Proc Lab, Beijing 100022, Peoples R China

[3] Xi An Jiao Tong Univ, State Key Lab Mech Behav Mat, Xian 710049, Peoples R China

来源：

RARE METAL MATERIALS AND ENGINEERING | 2007年 / 36卷 / 03期

关键词：

Cu-W thin film; phase transition; residual stress; annealing;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The phase transition of Copper-tungsten films deposited on Si (100) and Al2O3 substrates took place by means of in situ annealing in vacuum chamber at different temperatures. X-ray diffraction (XRD) and the polarization phase shift technique were employed to characterize the microstructure and residual stress of Cu-W films, respectively. The results indicated that the two successive but distinctive stages of phase transition appeared with the change of annealing temperatures, i.e., W (Cu) solution formation and two-phase crystalline (W and Cu) structure formation. The relationship between phase transition and residual stress was investigated, the tensile stress was caused during phase transition, whereas it was released with crystalline growth.

引用

页码：435 / 439

页数：5

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