Electrical and optical properties of germanium-doped zinc oxide thin films

被引:20
作者
Arita, M [1 ]
Yamaguchi, M [1 ]
Masuda, M [1 ]
机构
[1] Fac Engn, Dept Mat Sci & Engn, Fukuoka 8128581, Japan
关键词
zinc oxide; germanium; thin film; electrical conductivity; visible light transparency;
D O I
10.2320/matertrans.45.3180
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Gennanium-doped zinc oxide thin films with Ge content of 0similar to8.1 at% were deposited by an RF magnetron sputtering. The electrical and optical properties of the films were investigated. The Ge doping caused the reduction of resistivity of the films, and at about 3% of the Ge content showed the minimum resistivity of about 2 x 10(-3) Omegacm. With high content of Ge, however. the crystalline structure changed and the resistivity of the film increased.
引用
收藏
页码:3180 / 3183
页数:4
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