Screening effect in contactless electroreflectance spectroscopy observed for AlGaN/GaN heterostructures with two dimensional electron gas

被引：19
作者：
Motyka, M.
Kudrawiec, R.
Syperek, M.
Misiewicz, J.
Rudzinski, M.
Hageman, P. R.
Larsen, P. K.
机构：
[1] Wroclaw Tech Univ, Inst Phys, PL-50370 Wroclaw, Poland
[2] Radboud Univ Nijmegen, Inst Mol & Mat, NL-6525 ED Nijmegen, Netherlands
来源：
THIN SOLID FILMS | 2007年 / 515卷 / 11期
关键词：
GaN; photoreflectance; contractless electroreflectance; screening;
D O I：
10.1016/j.tsf.2006.12.008
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
AlGaN/GaN heterostructures with a two dimensional electron gas (2DEG) at the interface have been investigated by contactless electroreflectance (CER) and photoreflectance (PR) spectroscopies. It has been shown that the 2DEG effectively screens the GaN layer and hence no signal related to a bandgap transition in the GaN layer is observed in CER spectra whereas the CER signal related to a bandgap transition in the AlGaN layer is very strong. The screening phenomenon is unimportant for PR spectroscopy due to different mechanism of the electromodulation. As a result both GaN and AIGaN related transitions are clearly observed in PR spectra. It has been proposed that the screening phenomena observed in CER can find application in contactless detection of the 2DEG in AlGaN/GaN heterostructures. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：4662 / 4665
页数：4
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