Dependence of dark current and photoresponse on polarization charges for AlGaN-based heterojunction p-i-n photodetectors

被引：7
|
作者：
Chen, Hai-feng [1 ,2 ]
Chen, Yi-Ren [1 ]
Song, Hang [1 ]
Li, Zhi-Ming [1 ]
Jiang, Hong [1 ]
Li, Da-Bing [1 ]
Miao, Guo-Qing [1 ]
Sun, Xiao-Juan [1 ]
Zhang, Zhi-Wei [1 ]
机构：
[1] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, State Key Lab Luminescence & Applicat, 3888 Dong Nanhu Rd, Changchun 130033, Peoples R China
[2] Univ Chinese Acad Sci, Beijing 100039, Peoples R China
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2017年 / 214卷 / 06期
基金：
中国国家自然科学基金;
关键词：
AlGaN; heterojunction; photodetectors; polarization; HIGH QUANTUM EFFICIENCY; BLIND; PHOTODIODES; ALXGA1-XN; GROWTH;
D O I：
10.1002/pssa.201600932
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The influence of the polarization charges on the properties of AlGaN-based heterojunction p-i-n ultraviolet photodetectors was investigated. It is found that the polarization charges at the hetero-interface can enhance the electric field intensity and result in an increased dark current. On the contrary, the polarization charges can lower the photoresponse because the direction of polarization electric field is opposite to the applied electric field in the light absorption layer.
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收藏
页数：6
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