Multiple-time-instant 2D thermal mapping during a single ESD event

被引：7

作者：

Dubec, V

Bychikhin, S

Blaho, A

Heer, M

Pogany, D

Denison, M

Jensen, N

Stecher, M

Groos, G

Gornik, E

机构：

[1] Vienna Univ Technol, Inst Solid State Elect, A-1040 Vienna, Austria

[2] Infineon Technol, D-81617 Munich, Germany

[3] Univ Fed Armed Forces, D-85577 Neubiberg, Germany

来源：

MICROELECTRONICS RELIABILITY | 2004年 / 44卷 / 9-11期

关键词：

D O I：

10.1016/j.microrel.2004.07.087

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 2D transient interferometric mapping (TIM) method for thermal and free carrier imaging of semiconductor devices at two time instants during a single electrical stress event is presented. The time resolution is 5 ns and the time delay between imaging laser pulses is independently adjustable. By using a short delay between the pulses, the instantaneous 2D density of dissipated thermal power can be calculated. The method is applied to investigate moving current filaments in smart power DMOS transistors and in electrostatic discharge (ESD) protection devices exhibiting non-repeatable triggering behaviour under ESD-like stress. (C) 2004 Elsevier Ltd. All rights reserved.

引用

页码：1793 / 1798

页数：6

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