Hot carrier reliability of RF n- LDMOS for S band radar application

被引：8
作者：
Gares, M. [1 ]
Maanane, H.
Masmoudi, M.
Bertram, P.
Marcon, J.
Belaid, M. A.
Mourgues, K.
Tolant, C.
Eudeline, P.
机构：
[1] Univ Rouen, LEMI, IUT Rouen, F-76821 Mont St Aignan, France
[2] THALES Air Def, F-76520 Ymare, France
来源：
MICROELECTRONICS RELIABILITY | 2006年 / 46卷 / 9-11期
关键词：
D O I：
10.1016/j.microrel.2006.07.074
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents an innovative reliability bench specifically dedicated to high RF power device lifetime tests under pulse conditions for radar application. A base-station dedicated LDMOS transistor has been chosen for RF life-tests and a complete device electric characterization has been performed. A whole review of its critical electrical parameters after accelerated ageing tests is proposed and discussed. This study tend to explain the physical degradation mechanisms occurred during RF life-tests by means of 2D ATLAS-SILVACO simulations. Finally, the paper demonstrates that N-LDMOS degradation is linked to hot carriers generated interface states (traps) and trapped electrons, which results in a build up of negative charge at Si/SiO2 interface. More interface states are created at low temperature due to a located maximum impact ionization rate at the gate edge.
引用
收藏
页码：1806 / 1811
页数：6
相关论文
共 13 条
[1]   A review of hot-carrier degradation mechanisms in MOSFETs [J].
Acovic, A ;
LaRosa, G ;
Sun, YC .
MICROELECTRONICS AND RELIABILITY, 1996, 36 (7-8) :845-869
[2]  
BROWN JD, 2004, IEEE MTT S INT MICR, P833
[3]  
BURGER W, ESNDF 2002
[4]   Analysis of hot-carrier degradation in a SOI LDMOS transistor with a steep retrograde drift doping profile [J].
Cortés, I ;
Roig, J ;
Flores, D ;
Urresti, J ;
Hidalgo, S ;
Rebollo, J .
MICROELECTRONICS RELIABILITY, 2005, 45 (3-4) :493-498
[5]   A high performance RF LDMOSFET in thin film SOI technology with step drift profile [J].
Luo, J ;
Cao, G ;
Madathil, SNE ;
De Souza, MM .
SOLID-STATE ELECTRONICS, 2003, 47 (11) :1937-1941
[6]  
MAANANE H, 2005, STUDY RF N LDMOS CRI
[7]   Nature and location of interface traps in RF LDMOS due to hot carriers [J].
Nigam, T ;
Shibib, A ;
Xu, S ;
Safar, H ;
Steinberg, L .
MICROELECTRONIC ENGINEERING, 2004, 72 (1-4) :71-75
[8]  
POOLE WE, 1974, IEEE REL PHYS S
[9]  
PRITISKUTCH J, 2000, 1228 AN
[10]  
Rice J, 2002, MICROWAVE J, V45, P64
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