Fabrication of Cu2ZnSnS4 thin films by simple solution method using citric acid as complexing agent

被引：4
作者：
Guan, Hao [1 ,2 ]
Shen, Honglie [1 ]
Wang, Wei [1 ]
机构：
[1] Nanjing Univ Aeronaut & Astronaut, Coll Mat Sci & Technol, 29 Yudao St, Nanjing 210016, Jiangsu, Peoples R China
[2] Yancheng Inst Technol, Sch Mat Engn, 9 Yinbing St, Yancheng 224051, Peoples R China
来源：
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2017年 / 28卷 / 19期
基金：
美国国家科学基金会;
关键词：
IONIC LAYER ADSORPTION; SOLAR-CELL; SULFURIZATION; TEMPERATURE; PRECURSORS;
D O I：
10.1007/s10854-017-7303-x
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Cu2ZnSnS4 (CZTS) films were prepared by sulfurizing Cu-Zn-Sn precursor deposited via a simple solution method using environment-friendly citric acid as complexing agent. A single Cu2ZnSnS4 thin film was obtained at 500 A degrees C under a mixed N-2 + H2S (5%) atmosphere. The effects of sulfurization temperature on structural, morphological and optical properties were studied. The results showed that the CZTS thin film annealed at 500 A degrees C exhibited large agglomeration of grains, ideal band gap (E (g) = 1.49 eV) and high optical absorption coefficient (> 10(4) cm(-1)). The resulted carrier concentration and mobility were about 3.652 x 10(18) cm(-3) and 26.32 cm(2)/Vs, respectively.
引用
收藏
页码：14424 / 14429
页数：6
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