Electrical properties of semiconductive Nb-doped BaTiO3 thin films prepared by metal-organic chemical-vapor deposition

被引：33
|
作者：
Nagano, D [1 ]
Funakubo, H [1 ]
Shinozaki, K [1 ]
Mizutani, N [1 ]
机构：
[1] Tokyo Inst Technol, Fac Engn, Dept Inorgan Mat, Meguro Ku, Tokyo 152, Japan
来源：
APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 16期
关键词：
D O I：
10.1063/1.121251
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Epitaxially grown semiconductive Nb-doped BaTiO3 thin films with low electrical resistivity similar to that of the bulk single crystal were prepared by metal-organic chemical-vapor deposition. Thin films with 1.5-7.5 at. % Nb content showed n-type semiconductor character. The films with 5.7 at. % Nb content showed the lowest resistivity, 2.8X10(-2) Ohm cm. This value is three orders of magnitude lower than those reported for sintered of Nb-doped BaTiO3, and similar to that of Nb-doped BaTiO3 single crystals. (C) 1998 American Institute of Physics.
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页码：2017 / 2019
页数：3
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