Femtosecond laser-induced ultrafast transient snapshots and crystallization dynamics in phase change material

被引：14

作者：

Sahu, Smriti ^{[1
]}

Sharma, Rituraj ^{[2
]}

Adarsh, K. V. ^{[2
]}

Manivannan, Anbarasu ^{[1
,3
]}

机构：

[1] Indian Inst Technol Indore, Discipline Elect Engn, Indore 453552, Madhya Pradesh, India

[2] Indian Inst Sci Educ & Res Bhopal, Dept Phys, Bhopal 462066, Madhya Pradesh, India

[3] Indian Inst Technol Indore, Met Engn & Mat Sci, Indore 453552, Madhya Pradesh, India

来源：

OPTICS LETTERS | 2017年 / 42卷 / 13期

关键词：

AMORPHOUS GE2SB2TE5 FILMS; THIN-FILMS; RAMAN-SCATTERING; CHANGE MEMORY; PULSES; SPECTROSCOPY; TRANSITIONS;

D O I：

10.1364/OL.42.002503

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We report here femtosecond laser-driven transient snapshots of ultrafast crystallization of Ge2Sb2Te5 films from its as-deposited amorphous phase, and the local structural change is validated by micro-Raman spectroscopy and x-ray diffraction. The decay time constant of similar to 5 ps in transient spectra with a precise temporal resolution using 400 nm (pump) reveals about 68 volumetric percentage crystallization at a remarkably low fluence of 4.78 mJ center dot cm(-2). This is attributed to reiterated excitation after a complete carrier relaxation and formation of a long-lasting transient phase at sub-threshold fluences. Furthermore, Raman spectra of irradiated spots confirm defective-octahedral modes at 110 and 160 cm(-1) validating crystallization. (C) 2017 Optical Society of America

引用

页码：2503 / 2506

页数：4

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