Luminescence and absorption in InGaN epitaxial layers and the van Roosbroeck-Shockley relation

被引：87

作者：

Schenk, HPD ^{[1
]}

Leroux, M ^{[1
]}

de Mierry, P ^{[1
]}

机构：

[1] CNRS, Ctr Rech Heteroepitaxie & Applicat, F-06560 Valbonne, France

来源：

JOURNAL OF APPLIED PHYSICS | 2000年 / 88卷 / 03期

关键词：

D O I：

10.1063/1.373850

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Wurtzite InxGa1-xN (0.01 less than or similar to x less than or similar to 0.14) films have been grown by metalorganic vapor phase epitaxy on sapphire substrates. Integrated photoluminescence intensity and line shapes have been studied as functions of temperature and alloy composition x. We compare the "effective" InGaN band gap energy assessed by photothermal deflection spectroscopy with a "mean" band gap energy calculated from room temperature photoluminescence spectra utilizing the van Roosbroeck-Shockley relation and assuming a Gaussian energy dependence of the subband gap absorption coefficient. The Stokes' shift between band gap energy and 300 K photoluminescence peak is explained by this model. (C) 2000 American Institute of Physics. [S0021- 8979(00)01415-8].

引用

页码：1525 / 1534

页数：10

共 93 条

[1] Measurement of gain current relations for InGaN multiple quantum wells [J].

Abare, AC ;

Mack, MP ;

Hansen, M ;

Speck, JS ;

Coldren, LA ;

DenBaars, SP ;

Meyer, GA ;

Lehew, SL ;

Cooper, GA .

APPLIED PHYSICS LETTERS, 1998, 73 (26) :3887-3889

[2]

Ambacher O, 1999, PHYS STATUS SOLIDI B, V216, P381, DOI 10.1002/(SICI)1521-3951(199911)216:1<381::AID-PSSB381>3.0.CO

[3]

2-O

[4] Absorption of InGaN single quantum wells determined by photothermal deflection spectroscopy [J].

Ambacher, O ;

Brunner, D ;

Dimitrov, R ;

Stutzmann, M ;

Sohmer, A ;

Scholz, F .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (3A) :745-752

[5] Temperature-dependent exciton luminescence in quantum wells by computer simulation [J].

Baranovskii, SD ;

Eichmann, R ;

Thomas, P .

PHYSICAL REVIEW B, 1998, 58 (19) :13081-13087

[6]

Bebb H.B., 1972, Semiconductors and Semimetals, V8, P181, DOI DOI 10.1016/S0080-8784(08)62345-5

[7] Evidence for compositional inhomogeneity in low In content (InGa)N obtained by resonant Raman scattering [J].

Behr, D ;

Wagner, J ;

Ramakrishnan, A ;

Obloh, H ;

Bachem, KH .

APPLIED PHYSICS LETTERS, 1998, 73 (02) :241-243

[8] Resonant hole localization and anomalous optical bowing in InGaN alloys [J].

Bellaiche, L ;

Mattila, T ;

Wang, LW ;

Wei, SH ;

Zunger, A .

APPLIED PHYSICS LETTERS, 1999, 74 (13) :1842-1844

[9] Effects of atomic short-range order on the electronic and optical properties of GaAsN, GaInN, and GaInAs alloys [J].

Bellaiche, L ;

Zunger, A .

PHYSICAL REVIEW B, 1998, 57 (08) :4425-4431

[10]

Bernardini F, 1999, PHYS STATUS SOLIDI B, V216, P391, DOI 10.1002/(SICI)1521-3951(199911)216:1<391::AID-PSSB391>3.0.CO

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