Excitation spectroscopy of terahertz emitters and detectors made from AIIIBV semiconductors

被引：0

作者：

Arlauskas, A. ^{[1
]}

Adamonis, J. ^{[1
]}

Adomavicius, R. ^{[1
]}

Krotkus, A. ^{[1
]}

机构：

[1] Ctr Phys Sci & Technol, LT-01108 Vilnius, Lithuania

来源：

2013 38TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ) | 2013年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Terahertz emitters and detectors made from A(III)B(V) semiconductors were investigated by means of a tunable wavelength laser system. THz excitation spectra of InAs and InSb has been investigated. It was shown that subsidiary valley position can be determined quite accurately. As terahertz detectors, the photoconductors manufactured from GaAs and InGaAs epitaxial layers grown by MBE at low substrate temperatures were investigated. It was revealed that the investigated materials can be used for manufacturing THz optoelectronic components sensitive to 1 mu m and 1.5 mu m wavelength laser radiation, respectively

引用

页数：2