Bandgap behavior of InGaN/GaN short period superlattices grown by metal-organic vapor phase epitaxy

被引:10
作者
Staszczak, G. [1 ]
Gorczyca, I. [1 ]
Grzanka, E. [1 ,2 ]
Smalc-Koziorowska, J. [1 ]
Targowski, G. [2 ]
Czernecki, R. [1 ,2 ]
Siekacz, M. [1 ,2 ]
Grzanka, S. [1 ,2 ]
Skierbiszewski, C. [1 ,2 ]
Schulz, T. [3 ]
Christensen, N. E. [4 ]
Suski, T. [1 ]
机构
[1] Inst High Pressure Phys, Sokolowska 29-37, PL-01142 Warsaw, Poland
[2] TopGaN Ltd, Sokolowska 29-37, PL-01142 Warsaw, Poland
[3] Leibniz Inst Crystal Growth, D-1248 Berlin, Germany
[4] Aarhus Univ, Dept Phys & Astron, DK-8000 Aarhus C, Denmark
来源
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2017年 / 254卷 / 08期
关键词
III-nitride semiconductors; band structure; MOVPE; superlattices; LIGHT-EMITTING-DIODES; III-V NITRIDES; QUANTUM-WELLS; ELECTRIC-FIELDS; POLARIZATION; GAINN;
D O I
10.1002/pssb.201600710
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
To obtain short period superlattices (SPLS) of InxGa1-xN/GaN in most cases molecular beam epitaxy has been applied. In this work the metal-organic vapor phase epitaxy was used for obtaining similar structures and their quality as well as light emission features are studied. Thanks to control of growth parameters it was possible to fabricate InxGa1-xN/GaN SPSLs with structural quality of structures grown by MBE. They contain around 30% of indium in quantum wells (QWs) and different number m of atomic monolayers in QWs, and n. in the barriers. X-ray diffraction and transmission electron microscope measurements have confirmed that the designed SPSLs structures were obtained. An agreement between the experimental results of photoluminescence measurements and theoretically predicted band gap behavior of SPSLs composed of mIn(x)Ga(1-x)N/nGaN was achieved. Built-in electric field in quantum wells and barriers of the selected structures were determined using a simplified method of calculation. (C) 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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页数:7
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