Pinning of recombination-enhanced dislocation motion in 4H-SiC: Role of Cu and EH1 complex

被引：25

作者：

Chen, Bin ^{[1
]}

Matsuhata, Hirofumi ^{[1
]}

Sekiguchi, Takashi ^{[2
]}

Ohyanagi, Takasumi ^{[1
]}

Kinoshita, Akimasa ^{[1
]}

Okumura, Hajime ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan

[2] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 21期

关键词：

cathodoluminescence; dislocation motion; dislocation pinning; getters; silicon compounds; wide band gap semiconductors; ELECTRICAL-ACTIVITY; SEMICONDUCTORS; DEFECTS; FRACTURE; SILICON;

D O I：

10.1063/1.3442907

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the pinning of recombination-enhanced dislocation motion in 4H-SiC by the implantation of Cu. The Cu was found to be preferentially gettered at basal plane dislocations (BPDs). Both EH1 and Z(1/2) center were detected in 4H-SiC by cathodoluminescence. It was noticed that the EH1 has high luminescence intensity at the central part of the BPDs, while the Z(1/2) does not. The complex of Cu and EH1 is regarded to be the cause for the pinning effect. The possible reason for the pinning is discussed. (C) 2010 American Institute of Physics. [doi:10.1063/1.3442907]

引用

页数：3

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