Nano-scale phase changes in Ge-Sb-Te films with electrical scanning probe microscopes

被引：0
作者：
Tanaka, K [1 ]
Gotoh, T [1 ]
Sugawara, K [1 ]
机构：
[1] Hokkaido Univ, Grad Sch Engn, Dept Appl Phys, Sapporo, Hokkaido 0608628, Japan
来源：
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS | 2004年 / 6卷 / 04期
关键词：
nano-scale phase change; Ge-Sb-Te; crystallization; scanning tunneling microscope; atomic force microscope;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Characteristics of amorphous-to-crystalline structural changes obtained using an electrical atomic force microscope and a scanning tunneling microscope have been investigated with simple models. A minimal mark size of similar to10 nm is consistent with an empirical thermodynamic model. The mark size increases with electrical power and film thickness, which can be accounted for using thermal and crystal-growth models.
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页码：1133 / 1140
页数：8
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