Oxidation induced stress in SiO2/SiC structures

被引：36

作者：

Li, Xiuyan ^{[1
,2
]}

Ermakov, Alexei ^{[3
]}

Amarasinghe, Voshadhi ^{[1
]}

Garfunkel, Eric ^{[1
,3
]}

Gustafsson, Torgny ^{[1
,2
]}

Feldman, Leonard C. ^{[1
,2
]}

机构：

[1] Rutgers State Univ, Inst Adv Mat Devices & Nanotechnol, Piscataway, NJ 08854 USA

[2] Rutgers State Univ, Dept Phys & Astron, Piscataway, NJ 08854 USA

[3] Rutgers State Univ, Dept Chem & Chem Biol, Piscataway, NJ 08854 USA

来源：

APPLIED PHYSICS LETTERS | 2017年 / 110卷 / 14期

关键词：

VISCOUS-FLOW; THERMAL SIO2; NITRIC-OXIDE; SILICON;

D O I：

10.1063/1.4979544

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Physical stress in SiO2/SiC stacks formed by the thermal oxidation of SiC is studied experimentally through both room temperature ex-situ and variable temperature (25-1150 degrees C) in-situ investigations. Mechanisms giving rise to the stress are a thermal component, associated with differences in thermal expansion coefficients of the oxide and the substrate, and an intrinsic component associated with the different atomic densities and structure of the film and substrate. Ex-situ results show a similar to 10(8) Pa compressive stress in the SiO2 film in a SiO2/SiC stack with a strong crystal face dependence (C face(000 (1) over bar) and Si face (0001)) and processing (temperature, growth rate) dependence. Real-time stress determination demonstrates that at temperatures above similar to 900 degrees C, the total intrinsic stress and a portion of the thermal stress may be relieved. On the basis of these findings, a viscous model is proposed to discuss the stress relaxation. Published by AIP Publishing.

引用

页数：4

共 26 条

[1] Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide [J].

Chung, GY ;

Tin, CC ;

Williams, JR ;

McDonald, K ;

Di Ventra, M ;

Pantelides, ST ;

Feldman, LC ;

Weller, RA .

APPLIED PHYSICS LETTERS, 2000, 76 (13) :1713-1715

[2] Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide [J].

Chung, GY ;

Tin, CC ;

Williams, JR ;

McDonald, K ;

Chanana, RK ;

Weller, RA ;

Pantelides, ST ;

Feldman, LC ;

Holland, OW ;

Das, MK ;

Palmour, JW .

IEEE ELECTRON DEVICE LETTERS, 2001, 22 (04) :176-178

[3]

Cooper JA, 1997, PHYS STATUS SOLIDI A, V162, P305, DOI 10.1002/1521-396X(199707)162:1<305::AID-PSSA305>3.0.CO

[4]

2-7

[5] Effects of nitrogen incorporation on the interfacial layer between thermally grown dielectric films and SiC [J].

Correa, S. A. ;

Radtke, C. ;

Soares, G. V. ;

Miotti, L. ;

Baumvol, I. J. R. ;

Dimitrijev, S. ;

Han, J. ;

Hold, L. ;

Kong, F. ;

Stedile, F. C. .

APPLIED PHYSICS LETTERS, 2009, 94 (25)

[6] Defect levels of carbon-related defects at the SiC/SiO2 interface from hybrid functionals [J].

Devynck, Fabien ;

Alkauskas, Audrius ;

Broqvist, Peter ;

Pasquarello, Alfredo .

PHYSICAL REVIEW B, 2011, 83 (19)

[7] Intrinsic origin of negative fixed charge in wet oxidation for silicon carbide [J].

Ebihara, Yasuhiro ;

Chokawa, Kenta ;

Kato, Shigenori ;

Kamiya, Katsumasa ;

Shiraishi, Kenji .

APPLIED PHYSICS LETTERS, 2012, 100 (21)

[8] VISCOUS-FLOW OF THERMAL SIO2 [J].

EERNISSE, EP .

APPLIED PHYSICS LETTERS, 1977, 30 (06) :290-293

[9] Unified theory of silicon carbide oxidation based on the Si and C emission model [J].

Goto, Daisuke ;

Hijikata, Yasuto .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2016, 49 (22)

[10]

Hetherington G., 1962, Phys. Chem. Glasses, V3, P129

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