Epitaxial growth and properties study of p-type doped ZnO:Sb by PLD

被引：20
作者：
Nasser, Ramzi [1 ]
Song, Ji-Ming [1 ]
Elhouichet, Habib [2 ,3 ]
机构：
[1] Anhui Univ, Sch Chem & Chem Engn, Anhui Prov Key Lab Chem Inorgan Organ Hybrid Func, Hefei 230601, Anhui, Peoples R China
[2] Univ Bisha, Coll Sci, Phys Dept, PB 551, Bisha 61922, Saudi Arabia
[3] Univ Tunis El Manar, Sci Fac Tunis, Phys Dept, Tunis 2092, Tunisia
来源：
SUPERLATTICES AND MICROSTRUCTURES | 2021年 / 155卷
关键词：
PLD method; ZnO films; Sb doping; P-type conductivity; Photoluminescence; ZnO homojunction Device; THIN-FILMS; ELECTRICAL-PROPERTIES; OPTICAL-PROPERTIES; BETA-GA2O3; COMPLEXES;
D O I：
10.1016/j.spmi.2021.106908
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Undoped and antimony (Sb) doped ZnO films were synthesized on sapphire (0001) substrates using Pulsed Laser Deposition (PLD) method. Structural and morphological studies proved the good crystallinity of the ZnO films with c-axis (0002) orientation growth. The substitution of Sb in ZnO lattice was proved from the analysis of XPS data. Interestingly, it was important that the presence of Sb5+ ions opened the way for the apparition of the complex acceptor (SbZn-2VZn) level with high stability. The decrease in the value of the band gap Eg with Sb doping evidenced the creation of energy levels related to such complex acceptor. From the study of photoluminescence (PL) at low temperatures, it was shown the dominant emission is related to free electron transition from neutral acceptor (e, A0), indicating the conductivity conversion from n to p with Sb doping. The reproducibility and stability of p-type conduction from the ZnO:Sb3% films were evaluated by Hall measurements. As application, ZnO homojunction device was carefully made and shows rectifying current-voltage (I-V) characteristics, typical to perfect diode. Thus, the prepared ZnO-Sb films are promising for application in optoelectronic field.
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页数：10
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