Epitaxial lateral overgrowth of AlN on trench-patterned AlN layers

被引：110

作者：

Imura, Masataka

Nakano, Kiyotaka

Narita, Gou

Fujimoto, Naoki

Okada, Narihito

Balakrishnan, Krishnan

Iwaya, Motoaki

Kamiyama, Satoshi

Amano, Hiroshi

Akasaki, Isamu

Noro, Tadashi

Takagi, Takashi

Bandoh, Akira

机构：

[1] Meijo Univ, Fac Sci & Technol, Century COE Program 21st, Nano Factory,Tempaku Ku, Nagoya, Aichi 4688502, Japan

[2] Ibiden Co Ltd, Ceram Operat, Gifu 5038503, Japan

[3] Showa Denko Co Ltd, Corp R&D Ctr, Chiba 2670056, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2007年 / 298卷 / SPEC. ISS期

关键词：

ELO; TEM; HT-MOVPE; metal-organic vapor phase epitaxy; Aln; nitrides;

D O I：

10.1016/j.jcrysgro.2006.10.043

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Epitaxial lateral overgrowth (ELO) of high-quality AlN layers on trench-patterned AlN underlying layers has been demonstrated by high-temperature metal-organic vapor phase epitaxy. Under optimized conditions, a high growth rate and an atomically flat surface of thick ELO-AlN without cracks were obtained. Fully coalesced ELO-AlN epilayers were obtained on AlN templates having (10 (1) over bar0) trenches. AlN grown above the groove had low dislocation density due to filtration caused by the grooves. In addition, most of the dislocations threading from the AlN template were annihilated by the formation of a loop structure during growth with increasing thickness of AlN. The average dislocation density of the ELO-AlN was calculated to be 4 x 10(7) cm(-2). (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：257 / 260

页数：4

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