Electron Nonionizing Energy Loss for Device Applications

被引：55

作者：

Jun, Insoo ^{[1
]}

Kim, Wousik ^{[1
]}

Evans, Robin ^{[2
]}

机构：

[1] CALTECH, Jet Prop Lab, Pasadena, CA 91109 USA

[2] ManTech SRS Technol Inc, Montrose, CA 91020 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2009年 / 56卷 / 06期

关键词：

Lindhard partition function; Mott cross section; nonionizing energy loss (NIEL); NIEL CALCULATIONS; DAMAGE; IONS;

D O I：

10.1109/TNS.2009.2033692

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The electron induced nonionizing energy loss (NIEL) for representative device and detector materials are presented here. The electron NIELs are computed analytically using the Mott differential cross section. As for the partition function, which describes the portion of energy deposited into displacing lattice atoms, the expression recently developed by Akkerman et al. was used that better fits for the low recoil energy.

引用

收藏

页码：3229 / 3235

页数：7

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