1.3 μm InAs/GaAs quantum-dot laser monolithically grown on Si substrates operating over 100°C

被引：74

作者：

Chen, S. M. ^{[1
]}

Tang, M. C. ^{[1
]}

Wu, J. ^{[1
]}

Jiang, Q. ^{[1
]}

Dorogan, V. G. ^{[2
]}

Benamara, M. ^{[2
]}

Mazur, Y. I. ^{[2
]}

Salamo, G. J. ^{[2
]}

Seeds, A. J. ^{[1
]}

Liu, H. ^{[1
]}

机构：

[1] UCL, Dept Elect & Elect Engn, London WC1E 7JE, England

[2] Univ Arkansas, Inst Nanosci & Engn, Fayetteville, AR 72701 USA

来源：

ELECTRONICS LETTERS | 2014年 / 50卷 / 20期

基金：

英国工程与自然科学研究理事会; 美国国家科学基金会;

关键词：

III-V semiconductors - Indium arsenide - Nanocrystals - Threshold current density - Semiconductor quantum dots;

D O I：

10.1049/el.2014.2414

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A high-performance 1.3 mu m InAs/GaAs quantum-dot laser directly grown on Si substrates has been achieved by using InAlAs/GaAs strained-layer superlattice serving as dislocation filter layers ( DFLs). The Si-based laser achieves lasing operation up to 111 degrees C with a threshold current density of 200 A/cm(2) and an output power exceeding 100 mW at room temperature.

引用

页码：1467 / 1468

页数：2

共 14 条

[1]

Chen R, 2011, NAT PHOTONICS, V5, P170, DOI [10.1038/nphoton.2010.315, 10.1038/NPHOTON.2010.315]

[2] InAs/GaAs Quantum-Dot Superluminescent Light-Emitting Diode Monolithically Grown on a Si Substrate [J].

Chen, Siming ;

Tang, Mingchu ;

Jiang, Qi ;

Wu, Jiang ;

Dorogan, Vitaliy G. ;

Benamara, Mourad ;

Mazur, Yuriy I. ;

Salamo, Gregory J. ;

Smowton, Peter ;

Seeds, Alwyn ;

Liu, Huiyun .

ACS PHOTONICS, 2014, 1 (07) :638-642

[3] Hybrid Quantum Well/Quantum Dot Structure for Broad Spectral Bandwidth Emitters [J].

Chen, Siming ;

Zhou, Kejia ;

Zhang, Ziyang ;

Orchard, Jonathan R. ;

Childs, David T. D. ;

Hugues, Maxime ;

Wada, Osamu ;

Hogg, Richard A. .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2013, 19 (04)

[4] Continuous-wave InAs/GaAs quantum-dot laser diodes monolithically grown on Si substrate with low threshold current densities [J].

Lee, Andrew ;

Jiang, Qi ;

Tang, Mingchu ;

Seeds, Alwyn ;

Liu, Huiyun .

OPTICS EXPRESS, 2012, 20 (20) :22181-22187

[5]

Liang D, 2010, NAT PHOTONICS, V4, P511, DOI [10.1038/NPHOTON.2010.167, 10.1038/nphoton.2010.167]

[6] High performance continuous wave 1.3 μm quantum dot lasers on silicon [J].

Liu, Alan Y. ;

Zhang, Chong ;

Norman, Justin ;

Snyder, Andrew ;

Lubyshev, Dmitri ;

Fastenau, Joel M. ;

Liu, Amy W. K. ;

Gossard, Arthur C. ;

Bowers, John E. .

APPLIED PHYSICS LETTERS, 2014, 104 (04)

[7]

Liu HY, 2011, NAT PHOTONICS, V5, P416, DOI [10.1038/nphoton.2011.120, 10.1038/NPHOTON.2011.120]

[8] High-performance three-layer 1.3-μm InAs-GaAs quantum-dot lasers with very low continuous-wave room-temperature threshold currents [J].

Liu, HY ;

Childs, DT ;

Badcock, TJ ;

Groom, KM ;

Sellers, IR ;

Hopkinson, M ;

Hogg, RA ;

Robbins, DJ ;

Mowbray, DJ ;

Skolnick, MS .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2005, 17 (06) :1139-1141

[9] Self-organised quantum dots as dislocation filters: the case of GaAs-based lasers on silicon [J].

Mi, Z ;

Yang, J ;

Bhattacharya, P ;

Huffaker, DL .

ELECTRONICS LETTERS, 2006, 42 (02) :121-123

[10]

Michel J, 2010, NAT PHOTONICS, V4, P527, DOI [10.1038/nphoton.2010.157, 10.1038/NPHOTON.2010.157]

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