Films of hydrogenated silicon oxycarbonitride. Part I. Chemical and phase composition

被引：8

作者：

Fainer, N. I. ^{[1
]}

Plekhanov, A. G. ^{[1
]}

Rumyantsev, Yu. M. ^{[1
]}

Maximovskii, E. A. ^{[1
]}

Shayapov, V. R. ^{[1
]}

机构：

[1] Russian Acad Sci, Siberian Branch, Nikolaev Inst Inorgan Chem, Novosibirsk 630090, Russia

来源：

GLASS PHYSICS AND CHEMISTRY | 2014年 / 40卷 / 05期

基金：

俄罗斯基础研究基金会;

关键词：

silicon oxycarbonitride thin films; plasma chemical synthesis; nanocomposite films; phases of the alpha-Si3-xCxN4 family; THIN-FILMS; CARBONITRIDE FILMS; DEPOSITION; PLASMA; OXYNITRIDE; LAYERS;

D O I：

10.1134/S1087659614050034

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The method of preparation of hydrogenated silicon oxycarbonitride films with variable composition SiC (x) N (y) O (z) : H by the plasma chemical vapor decomposition of a volatile organosilicon compound, 1,1,1,3,3,3-hexamethyldisilazane (enhanced to IUPAC, bis(trimethylsilyl)amine) in a gas phase containing nitrogen and oxygen in the temperature range of 373-973 K has been developed. It has been shown that nitrogen and oxygen provide the decrease in carbon content in films due to gas-phase reaction giving volatile products (CN)(2), CH4, CO, and H-2(H). The obtained SiC (x) N (y) O (z) : H films are nanocomposite, in the amorphous part of which the nanocrystals are distributed, which belong to the determined phases of the Si-C-N system, namely, alpha-Si3N4, alpha-Si3 - x C (x) N-4, and graphite.

引用

页码：570 / 577

页数：8

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