Silicon quantum computation based on magnetic dipolar coupling

被引:58
作者
de Sousa, R [1 ]
Delgado, JD
Das Sarma, S
机构
[1] Univ Calif Berkeley, Dept Chem, Berkeley, CA 94720 USA
[2] Univ Calif Berkeley, Pitzer Ctr Theoret Chem, Berkeley, CA 94720 USA
[3] Univ Maryland, Dept Phys, Condensed Matter Theory Ctr, College Pk, MD 20742 USA
来源
PHYSICAL REVIEW A | 2004年 / 70卷 / 05期
基金
美国国家科学基金会;
关键词
D O I
10.1103/PhysRevA.70.052304
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
A dipolar gate alternative to the exchange-gate-based Kane quantum computer is proposed where the qubits are electron spins of shallow group V donors in silicon. Residual exchange coupling is treated as gate error amenable to quantum error correction, removing the stringent requirements on donor positioning characteristic of all silicon exchange-based implementations [Koiller , Phys. Rev. Lett. 88, 027903 (2002)]. Contrary to common speculation, such a scheme is scalable with no overhead in gating time even though it is based on long-range dipolar interqubit coupling.
引用
收藏
页码:052304 / 1
页数:6
相关论文
共 37 条
[1]   Electron-spin phase relaxation of phosphorus donors in nuclear-spin-enriched silicon [J].
Abe, E ;
Itoh, KM ;
Isoya, J ;
Yamasaki, S .
PHYSICAL REVIEW B, 2004, 70 (03) :033204-1
[2]   Entangled spin states in self-assembled monolayer systems [J].
Berman, GP ;
Tsifrinovich, VI ;
Allara, DL .
PHYSICAL REVIEW B, 2002, 66 (19) :1-3
[3]   Physical optimization of quantum error correction circuits [J].
Burkard, G ;
Loss, D ;
DiVincenzo, DP ;
Smolin, JA .
PHYSICAL REVIEW B, 1999, 60 (16) :11404-11416
[4]   Theory of nuclear-induced spectral diffusion: Spin decoherence of phosphorus donors in Si and GaAs quantum dots [J].
de Sousa, R ;
Das Sarma, S .
PHYSICAL REVIEW B, 2003, 68 (11) :1153221-11532213
[5]   Gate control of spin dynamics in III-V semiconductor quantum dots [J].
de Sousa, R ;
Das Sarma, S .
PHYSICAL REVIEW B, 2003, 68 (15) :1553301-1553306
[6]   Universal quantum computation with the exchange interaction [J].
DiVincenzo, DP ;
Bacon, D ;
Kempe, J ;
Burkard, G ;
Whaley, KB .
NATURE, 2000, 408 (6810) :339-342
[7]  
Dykman MI, 2000, FORTSCHR PHYS, V48, P1095, DOI 10.1002/1521-3978(200009)48:9/11<1095::AID-PROP1095>3.0.CO
[8]  
2-U
[9]   ELECTRON SPIN RESONANCE EXPERIMENTS ON DONORS IN SILICON .2. ELECTRON SPIN RELAXATION EFFECTS [J].
FEHER, G ;
GERE, EA .
PHYSICAL REVIEW, 1959, 114 (05) :1245-1256
[10]   Bulk spin-resonance quantum computation [J].
Gershenfeld, NA ;
Chuang, IL .
SCIENCE, 1997, 275 (5298) :350-356