Half-oxidized phosphorene: band gap and elastic properties modulation

被引:12
作者
Drissi, L. B. [1 ,2 ,3 ]
Sadki, S. [1 ]
Sadki, K. [1 ]
机构
[1] Mohammed V Univ Rabat, Fac Sci, LPHE, Modeling & Simulat, Rabat, Morocco
[2] Mohammed V Univ Rabat, CPM, Fac Sci, Rabat, Morocco
[3] Abdus Salaam Int Ctr Theoret Phys, Trieste, Italy
关键词
phosphorene; oxidation; energetic stability; band gap; elastic properties; charge transfer; THIN-FILMS; BLACK; SILICENE; OXIDE; MOS2;
D O I
10.1088/0953-8984/28/14/145501
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Based on a first principles approach, we study structural, electronic and elastic properties, as well as stabilities of all possible half-oxidized phosphorene conformers. Stability analysis reveals that oxygen chemisorption is an exothermic process in the six configurations despite the formation of interstitial oxygen bridges in three of them. Electronic structure calculations show that oxidation induces a band gap modulation ranging between 0.54 and 1.57 eV in the generalized gradient approximation corrected to 1.19 and 2.88 eV using GW. The mechanical response of the conformers is sensitively dependent on direction and indicates that the new derivatives are incompressible materials and one configuration has an auxetic behavior. The present results provide a basis for tailoring the electronic and elastic properties of phosphorene via half oxidation.
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页数:9
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