Temperature-dependent effect of oxygen vacancy on polarization switching of ferroelectric Bi3.25La0.75Ti3O12 thin films

被引：26
作者：
Zhang, ST [1 ]
Yuan, GL
Wang, J
Chen, YF
Cheng, GX
Liu, ZG
机构：
[1] Nanjing Univ, Dept Mat Sci & Engn, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China
[2] Nanjing Univ, Dept Phys, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China
来源：
SOLID STATE COMMUNICATIONS | 2004年 / 132卷 / 05期
基金：
中国国家自然科学基金;
关键词：
ferroelectric thin films; oxygen vacancy; hysteresis loop;
D O I：
10.1016/j.ssc.2004.07.072
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Thin films of Bi3.25La0.75Ti3O12 (BLT) were fabricated by pulsed-laser deposition. The ferroelectric fatigue and Raman measurements were carried out on the as-prepared, postannealed in air and postannealed in oxygen BLT films (BLT-1, BLT-2 and BLT-3, respectively). It was revealed that the BLT-2 films have the weakest fatigue-resistance and highest frequency shifted Raman vibration modes, indicating the highest oxygen vacancy concentration in the BLT-2 films. Based on the BLT-2 films, the temperature-dependent effect of oxygen vacancy on polarization switching is investigated. Generally, the coercive field (E-c) increases while the switched polarization (P-s) decreases monotonically with decreasing temperature. However, the remnant polarization (P-r) increases when the temperature decreases from 300 to 167 K, then decreases with further decreasing temperature. The results can be well explained using a model based on the temperature-dependent depth and shape of the domain wall-defect interaction potential well. (C) 2004 Elsevier Ltd. All rights reserved.
引用
收藏
页码：315 / 318
页数：4
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