Integrated ZnO nanotips on GaN light emitting diodes for enhanced emission efficiency

被引：138

作者：

Zhong, J. ^{[1
]}

Chen, H.

Saraf, G.

Lu, Y.

Choi, C. K.

Song, J. J.

Mackie, D. M.

Shen, H.

机构：

[1] Rutgers State Univ, Dept Elect & Comp Engn, Piscataway, NJ 08854 USA

[2] ZN Technol, Brea, CA 92821 USA

[3] Univ Calif San Diego, La Jolla, CA 92093 USA

[4] USA, Res Lab, Adelphi, MD 20783 USA

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 20期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2741052

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Enhancement of light extraction from an integrated ZnO nanotips/GaN light emitting diode (LED) is demonstrated. The device is composed of a GaN LED with a Ga-doped ZnO (GZO) transparent conductive layer and ZnO nanotips grown on GZO for light extraction. The light output power of a ZnO nanotips/GZO/GaN LED exhibits 1.7 times enhancement, in comparison with a conventional Ni/Au p-metal LED. The higher emission efficiency is attributed to the enhanced light transmission and scattering in the ZnO/GaN multilayer. (C) 2007 American Institute of Physics.

引用

页数：3

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