Shallow electron traps formed by Gd2+ ions adjacent to oxygen vacancies in cerium-doped Gd3Al2Ga3O12 crystals

被引:11
作者
Kitaura, Mamoru [1 ]
Watanabe, Shinta [2 ]
Kamada, Kei [3 ]
Kim, Kyoung Jin [4 ]
Yoshino, Masao [4 ]
Kurosawa, Shunsuke [1 ,3 ]
Yagihashi, Toru [1 ]
Ohnishi, Akimasa [1 ]
Hara, Kazuhiko [5 ]
机构
[1] Yamagata Univ, Fac Sci, Yamagata 9908560, Japan
[2] Nagoya Univ, Grad Sch Engn, Nagoya, Aichi 4648603, Japan
[3] Tohoku Univ, New Ind Creat Hatchery Ctr, Sendai, Miyagi 9808579, Japan
[4] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
[5] Shizuoka Univ, Res Inst Elect, Hamamatsu, Shizuoka 4328011, Japan
基金
日本学术振兴会;
关键词
LOW-TEMPERATURE THERMOLUMINESCENCE;
D O I
10.1063/1.5043218
中图分类号
O59 [应用物理学];
学科分类号
摘要
To clarify the origin of shallow electron traps in cerium-doped Gd3Al2Ga3O12 (Ce:GAGG), the optical properties of cerium-doped Lu3-xGdxAl2Ga3O12 crystals were investigated. Absorption spectra for x = 3 exhibited a prominent band at 12 000 cm(-1) when excited by 3.31-eV ultraviolet light. This band has been previously attributed to shallow electron traps at defect complexes associated with oxygen vacancies. When Gd3+ ions were replaced with Lu3+ ions, the 12 000cm(-1) band weakened and disappeared completely for Ce:Lu3Al2Ga3O12. In addition, thermally stimulated luminescence glow curves were observed. Optically stimulated luminescence indicated that the energy of the conduction band minimum did not change by the presence of Lu3+ ions. Thus, the Gd3+ ions were important for the formation of shallow electron traps in Ce:GAGG. First-principles calculations implied that Gd3+ ions responsible for shallow electron traps formed antisite defects at GAGG octahedral sites. Hence, defect complexes of antisite Gd2+ ions adjacent to oxygen vacancies were the most plausible candidates for shallow electron traps in Ce:GAGG. Published by AIP Publishing.
引用
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页数:4
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