Frequency Effect on Voltage Linearity of ZrO2-Based RF Metal-Insulator-Metal Capacitors

被引：29
|
作者：
Bertaud, Thomas [1 ,2 ]
Blonkowski, Serge [3 ]
Bermond, Cedric [1 ]
Vallee, Christophe [2 ]
Gonon, Patrice [2 ]
Gros-Jean, Michael [3 ]
Flechet, Bernard [1 ]
机构：
[1] Univ Savoie, LAHC, IMEP, UMR CNRS 5130, F-73376 Le Bourget Du Lac, France
[2] CNRS, LTM, UMR 5129, F-38054 Grenoble 9, France
[3] STMicroelectronics, F-38926 Crolles, France
来源：
IEEE ELECTRON DEVICE LETTERS | 2010年 / 31卷 / 02期
关键词：
Dielectric materials; metal-insulator-metal (MIM) devices; microwave measurement; zirconium;
D O I：
10.1109/LED.2009.2036275
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This letter deals with the electrical and wideband frequency characterizations of metal-insulator-metal capacitors integrating medium-kappa material, ZrO2. In particular, this letter focuses on the frequency effect on the voltage linearity of these capacitors and material. The dependence of the voltage-capacitance coefficient (VCC) alpha is, for the first time, studied from 1 kHz to 1 GHz. Intrinsic or extrinsic material origin of the VCC are discussed.
引用
收藏
页码：114 / 116
页数：3
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