60GHz Double-balanced Drain-pumped Up-conversion Mixer using 90nm CMOS

被引：0

作者：

Song, Insang ^{[1
]}

Lee, Jaejin ^{[2
]}

Byeon, Chulwoo ^{[1
]}

Cho, Seongjun ^{[1
]}

Kim, Hongyi ^{[1
]}

Oh, Innyeal ^{[1
]}

Park, Chulsoon ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Dept Elect Engn, 291 Daehak Ro, Daejeon 305701, South Korea

[2] Samsung Elect Co Ltd, Suwon, South Korea

来源：

2013 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST (IMS) | 2013年

关键词：

60; GHz; direct-conversion; up-conversion; mixer; CMOS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new type of drain-pumped mixer is proposed for a 60 GHz direct up-conversion using a standard 90nm CMOS process in this paper. Because no stacks are needed for the architecture, a high conversion gain (CG) thanks to high trans-conductance (gm) can be achieved while consuming low power. By configuring a balanced architecture for LO-to-RF isolation, the proposed mixer demonstrates CG of -5.1dB with a reasonable 0dBm LO power while maintaining low power dissipation of 16.3mW. Its LO-to-RF isolation is better than 30dB and size is only 0.35mm(2).

引用

页数：4

共 44 条

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