60GHz Double-balanced Drain-pumped Up-conversion Mixer using 90nm CMOS

被引：0
|
作者：
Song, Insang [1 ]
Lee, Jaejin [2 ]
Byeon, Chulwoo [1 ]
Cho, Seongjun [1 ]
Kim, Hongyi [1 ]
Oh, Innyeal [1 ]
Park, Chulsoon [1 ]
机构：
[1] Korea Adv Inst Sci & Technol, Dept Elect Engn, 291 Daehak Ro, Daejeon 305701, South Korea
[2] Samsung Elect Co Ltd, Suwon, South Korea
来源：
2013 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST (IMS) | 2013年
关键词：
60; GHz; direct-conversion; up-conversion; mixer; CMOS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new type of drain-pumped mixer is proposed for a 60 GHz direct up-conversion using a standard 90nm CMOS process in this paper. Because no stacks are needed for the architecture, a high conversion gain (CG) thanks to high trans-conductance (gm) can be achieved while consuming low power. By configuring a balanced architecture for LO-to-RF isolation, the proposed mixer demonstrates CG of -5.1dB with a reasonable 0dBm LO power while maintaining low power dissipation of 16.3mW. Its LO-to-RF isolation is better than 30dB and size is only 0.35mm(2).
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页数：4
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