High Performance, Sub-thermionic MoS2 Transistors using Tunable Schottky Contacts

被引：0
|
作者：
Bhattacharjee, S. [1 ]
Ganapathi, K. L. [1 ]
Mohan, S. [1 ]
Bhat, N. [1 ]
机构：
[1] Indian Inst Sci, Ctr Nano Sci & Engn, Bangalore 560014, Karnataka, India
来源：
2018 76TH DEVICE RESEARCH CONFERENCE (DRC) | 2018年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页数：2
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