Dielectronic recombination rate coefficients for H-like through Ne-like isosequences of Mg, Si, S, Ar, Ca, Fe, and Ni

被引:189
作者
Gu, MF [1 ]
机构
[1] MIT, Ctr Space Res, Cambridge, MA 02139 USA
关键词
atomic data; atomic processes;
D O I
10.1086/375135
中图分类号
P1 [天文学];
学科分类号
0704 ;
摘要
We present distorted-wave calculations and analytic fits to the dielectronic recombination (DR) rate coefficients of H-like to Ne-like isosequences of seven abundant astrophysical elements, including Mg, Si, S, Ar, Ca, Fe, and Ni. Both DeltaN = 0 (low-temperature) and DeltaN > 0 (high-temperature) DR channels are included for L-shell ions. Values of DeltaN > 0 DR for less abundant ions between Mg and Ni are also obtained through interpolation along the isosequences. Interpolation is not performed for DeltaN = 0 DR, since such rate coefficients are not smooth along the isosequences in general. Comparison is made with existing theoretical and experimental results, and collisional ionization equilibria resulting from the current DR rate coefficients are presented.
引用
收藏
页码:1131 / 1140
页数:10
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