Advanced materials for 193-nm resists

被引:11
|
作者
Ushirogouchi, T [1 ]
Asakawa, K [1 ]
Shida, N [1 ]
Okino, T [1 ]
Saito, S [1 ]
Funaki, Y [1 ]
Takaragi, A [1 ]
Tsutsumi, K [1 ]
Nakano, T [1 ]
机构
[1] Toshiba Corp, Ctr Corp Res & Dev, Adv Mat & Devices Labs, Saiwai Ku, Kawasaki, Kanagawa 2108582, Japan
关键词
193-nm resist; alicyclic; synthesis; polar groups; solubility parameter; adamantane; lacton; acrylate;
D O I
10.1117/12.388279
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Acrylate monomers containing alicyclic side chains featuring a series of polar substituent groups were assumed to be model compounds. Solubility parameters were calculated for the corresponding acrylate polymers. These acrylate monomers were synthesized using a novel aerobic oxidation reaction employing N-hydroxyphtalimide(NHPI) as a catalyst and then polymerized. These reactions were confirmed to be applicable for the mass-production of those compounds. The calculation results agreed with the hydrophilic parameters measured experimentally. Moreover the relationship between the resist performance and the above-mentioned solubility parameter has been studied. Rs a result, a correlation between the resist performance and the calculated solubility parameter was observed. Finally, resolution of 0.13-micron patterns based on the 1G DRAM design rule, could be successfully fabricated by optimizing the solubility parameter and the resist composition.
引用
收藏
页码:1147 / 1156
页数:8
相关论文
共 50 条
  • [41] Photoresists for 193-nm lithography
    Allen, RD
    Wallraff, GM
    Hofer, DC
    Kunz, RR
    IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1997, 41 (1-2) : 95 - 104
  • [42] THE PHOTODISSOCIATION OF PYRIDINE AT 193-NM
    PRATHER, KA
    LEE, YT
    ISRAEL JOURNAL OF CHEMISTRY, 1994, 34 (01) : 43 - 53
  • [43] SATURABLE ABSORBERS AT 193-NM
    MULLER, DF
    ROTHSCHILD, M
    BOYER, K
    RHODES, CK
    APPLIED PHYSICS B-PHOTOPHYSICS AND LASER CHEMISTRY, 1982, 28 (2-3): : 199 - 200
  • [44] 193-NM PHOTODISSOCIATION OF ACETYLENE
    BALKO, BA
    ZHANG, J
    LEE, YT
    JOURNAL OF CHEMICAL PHYSICS, 1991, 94 (12): : 7958 - 7966
  • [45] THE PHOTODISSOCIATION OF PHENYLSILANE AT 193-NM
    BAGGOTT, JE
    FREY, HM
    LIGHTFOOT, PD
    WALSH, R
    CHEMICAL PHYSICS LETTERS, 1986, 125 (01) : 22 - 26
  • [46] New BARC materials for the 65-nm node in 193-nm lithography
    Neef, CJ
    Krishnamurthy, V
    Nagatkina, M
    Bryant, E
    Windsor, M
    Nesbit, C
    ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XXI, PTS 1 AND 2, 2004, 5376 : 684 - 688
  • [47] Patterning with 193 nm resists
    Bakshi, V
    Smith, G
    Alzaben, T
    Beach, J
    Spurlock, K
    Berger, R
    Dorris, ST
    Pearson, S
    Holladay, D
    Woehl, J
    THIN FILM MATERIALS, PROCESSES, AND RELIABILITY, 2001, 2001 (24): : 31 - 41
  • [48] Non-chemically amplified resists for 193-nm immersion lithography: influence of absorbance on performance
    Chen, Lan
    Goh, Yong-Keng
    Lawrie, Kirsten
    Smith, Bruce
    Montgomery, Warren
    Zimmerman, Paul
    Blakey, Idriss
    Whittaker, Andrew
    ADVANCES IN RESIST MATERIALS AND PROCESSING TECHNOLOGY XXVII, PTS 1 AND 2, 2010, 7639
  • [49] Environmentally friendly negative resists based on acid-catalyzed acetalization for 193-nm lithography
    Kim, JB
    Jang, JH
    Ko, JS
    Choi, JH
    Lee, KK
    MACROMOLECULAR RAPID COMMUNICATIONS, 2003, 24 (15) : 879 - 882
  • [50] Quantum yields of photoacid generation in 193-nm chemically amplified resists by fluorescence imaging spectroscopy
    Ray, K
    Mason, MD
    Grober, RD
    CHEMISTRY OF MATERIALS, 2004, 16 (26) : 5726 - 5730