Advanced materials for 193-nm resists

被引:11
|
作者
Ushirogouchi, T [1 ]
Asakawa, K [1 ]
Shida, N [1 ]
Okino, T [1 ]
Saito, S [1 ]
Funaki, Y [1 ]
Takaragi, A [1 ]
Tsutsumi, K [1 ]
Nakano, T [1 ]
机构
[1] Toshiba Corp, Ctr Corp Res & Dev, Adv Mat & Devices Labs, Saiwai Ku, Kawasaki, Kanagawa 2108582, Japan
关键词
193-nm resist; alicyclic; synthesis; polar groups; solubility parameter; adamantane; lacton; acrylate;
D O I
10.1117/12.388279
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Acrylate monomers containing alicyclic side chains featuring a series of polar substituent groups were assumed to be model compounds. Solubility parameters were calculated for the corresponding acrylate polymers. These acrylate monomers were synthesized using a novel aerobic oxidation reaction employing N-hydroxyphtalimide(NHPI) as a catalyst and then polymerized. These reactions were confirmed to be applicable for the mass-production of those compounds. The calculation results agreed with the hydrophilic parameters measured experimentally. Moreover the relationship between the resist performance and the above-mentioned solubility parameter has been studied. Rs a result, a correlation between the resist performance and the calculated solubility parameter was observed. Finally, resolution of 0.13-micron patterns based on the 1G DRAM design rule, could be successfully fabricated by optimizing the solubility parameter and the resist composition.
引用
收藏
页码:1147 / 1156
页数:8
相关论文
共 50 条
  • [1] 193-nm single layer resists based on advanced materials
    Shida, N
    Ushirogouchi, T
    Asakawa, K
    Funaki, Y
    Takaragi, A
    Tsutsumi, K
    Inoue, K
    Nakano, T
    ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XVIII, PTS 1 AND 2, 2001, 4345 : 87 - 93
  • [2] Material Innovations for 193-nm Resists
    Nozaki, Koji
    JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY, 2010, 23 (06) : 795 - 801
  • [3] Defect learning with 193-nm resists
    Mäge, I
    Pintér, B
    Tuckermann, M
    Donzella, O
    METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XVIII, PTS 1 AND 2, 2004, 5375 : 779 - 791
  • [4] Design considerations for 193-nm positive resists
    Allen, RD
    Wan, IY
    Wallraff, GM
    DiPietro, RA
    Hofer, DC
    Kunz, RR
    MICROELECTRONICS TECHNOLOGY: POLYMERS FOR ADVANCED IMAGING AND PACKAGING, 1995, 614 : 255 - 270
  • [5] SURFACE IMAGING RESISTS FOR 193-NM LITHOGRAPHY
    JOHNSON, DW
    HARTNEY, MA
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (12B): : 4321 - 4326
  • [6] Design Considerations for 193-nm Positive Resists
    Allen, R. D.
    Wan, I.-Y.
    Wallraff, G. M.
    DiPietro, R. A.
    ACS Symposium Series, 1995, (614):
  • [7] DESIGN CONSIDERATIONS FOR 193-NM POSITIVE RESISTS
    ALLEN, RD
    WALLRAFF, GM
    HOFER, DC
    KUNZ, RR
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1995, 209 : 62 - PMSE
  • [8] Nanomolecular resists with adamantane core for 193-nm lithography
    Kim, JB
    Oh, TH
    Kim, K
    Advances in Resist Technology and Processing XXII, Pt 1 and 2, 2005, 5753 : 603 - 610
  • [9] Dissolution inhibitors for 193-nm chemically amplified resists
    Ushirogouchi, T
    Asakawa, K
    Okino, T
    Shida, N
    Kihara, N
    Nakase, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (12B): : 7625 - 7631
  • [10] Dissolution inhibitors for 193-nm chemically amplified resists
    Toshiba Corp, Kawasaki, Japan
    Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap, 12 B (7625-7631):